![]() B layer is usually thin, but characterised with high resistivity, so majority of careers will flow through into the C layer (due to different doping levels of these materials).Ĭurrents in BJT transistor can be found with Kirchhoff’s Law: I E = I C + I B. ![]() ![]() Majority of careers are moving from E across forward-biased pn-junction. One junction is forward-biased, and the other is reverse-biased. Base and collector layers are lightly doped, emitter layer – is heavily doped.Ĭharges flow at the BJT are depicted on the figure below. BJT transistor can be two types – pnp and npn BJT transistor.īipolar junction transistor (BJT) is characterised by three regions – base (B), collector (C) and emittor (E). BJT transistor is a three terminal semiconductor device, based on three layers of p and n layers, with different doping concentration.
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